Navitas Semiconductor Corporation (NVTS) shares traded at $11.88 on Tuesday, up $0.15, after the company secured a U.S. Army award to develop advanced silicon carbide power devices. The contract funds a prototype program centered on 10 kV power devices for defense and infrastructure systems, and it broadens Navitas' role in ultra-high-voltage power technology and domestic semiconductor manufacturing. The award also pushes the company's silicon carbide chip technology into a higher voltage class than any product it currently sells.

U.S. Army Award Under ALATTIS Prototype Program

Navitas secured the Army award under the ALATTIS prototype project, which targets a domestic process for manufacturing advanced silicon carbide devices. The program focuses on 10 kV insulated-gate bipolar transistors and related PiN diodes for demanding power applications. The Army Research Laboratory sponsors the work as part of efforts to strengthen high-power electronics for critical defense and infrastructure systems. Silicon carbide's wide-bandgap material properties allow power devices to operate at higher voltages and temperatures than conventional silicon, which underpins the material's role in high-power defense and infrastructure electronics.

Under the project, Navitas will apply its patented trench-assisted planar architecture alongside advanced diode technologies. Engineers will move through repeated design, fabrication, and testing cycles to validate a manufacturing process for the new devices. That approach aims to prove performance, reliability, and production readiness before wider deployment across military or infrastructure applications.

Navitas said the Army selected the company through a competitive process based on technology, reliability, and domestic supply-chain capabilities. The project also supports U.S. efforts to build more semiconductor manufacturing capacity for strategically important components. The award gives Navitas another route into applications where voltage, efficiency, and reliability remain critical requirements.

ALATTIS Project Extends GeneSiC Beyond Existing MOSFETs

The ALATTIS program would push Navitas beyond its existing silicon carbide MOSFET portfolio into a different device category. Unlike a MOSFET, an insulated-gate bipolar transistor combines a gate-controlled input with a bipolar conduction layer, a structure long used in very high-power conversion. Such devices can support extremely high voltages and large power loads across specialized electrical systems. Successful development could broaden the company's addressable technology range across defense, grid, and industrial power markets.

Navitas already sells products through its GeneSiC silicon carbide portfolio, which spans voltage ratings from 650 V to 6.5 kV. The company commercially released its 6.5 kV silicon carbide MOSFET technology in 2021 for high-voltage applications. That earlier work provides the technical background for the planned move toward 10 kV silicon carbide transistor development, a voltage rating roughly 50% above the portfolio's current commercial top end.

The new devices would also combine Navitas' existing material expertise with manufacturing techniques designed for higher voltage performance and long-term reliability. PiN diodes would form another part of that platform and support power conversion across demanding operating conditions. Those technologies could help Navitas build a wider ultra-high-voltage offering beyond its current commercial silicon carbide products.

NVTS Stock Gains as Defense Exposure Expands

NVTS gained $0.15 to $11.88 during Tuesday trading as the Army award added another catalyst for the expanding semiconductor business. The stock had closed Monday at $11.73 after falling 3.85% during the previous session. Tuesday's move recovered part of that decline while the broader market faced pressure from higher long-term Treasury yields.

The Army project also adds defense exposure to a business increasingly focused on higher-power markets and infrastructure applications. Navitas has expanded its silicon carbide work while continuing development across gallium nitride and high-voltage power systems. Those technologies target data centers, energy infrastructure, electric mobility, industrial systems, and other power-intensive equipment.

The Army announcement did not include the financial value of the award or a commercial production schedule. The project remains focused on prototype development and process validation before any broader manufacturing phase can emerge. Any clearer picture of funding size, development milestones, or a path to production would depend on future disclosures from Navitas or the Army. Even so, the selection expands Navitas' work in ultra-high-voltage silicon carbide technology and U.S.-based semiconductor development.